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C2062 Datasheet

NPN Transistor

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GuangDong Yuejing
High Technology CO.,LTD.
■■APPLICATIONHigh-Gain Amplifier.
C2062
—NPN silicon —
■■MAXIMUM RATING(Ta=25℃)
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
10
V
Collector current
IC 300 mA
Collector Power Dissipation
PC 300 mW
Junction Temperature
TJ 150
Storage Temperature Range
Tstg 55~150
■■ ELECTRICAL CHARACTERISTICSTa=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Common Emitter DC Current Gain hFE
10K
VCE= 3 VIc=100 mA
Collector Cut-off Current
ICBO
0.1 µA VCB= 30 VIE=0
Emitter Cut-off Current
IEBO
0.1 µA VEB= 10 VIc=0
Collector-Base Breakdown Voltage BVCBO 40
V Ic= 0.1 mAIE=0
Collector-Emitter Breakdown Voltage BVCEO 30
V Ic= 10 mAIB=0
Emitter-Base Breakdown Voltage
BVEBO
10
V IE= 0.1mAIc=0
Collector-Emitter Saturation Voltage VCE(sat)
1 V Ic= 100 mAIB= 0.1 mA
Gain bandwidth product
fT
200 MHz Ic= 10 mAVCE= 5 V, f = 100 MHz
Common Base Output Capacitance Cob
3.5 PF VCB= 30 V, IE=0, f = 1 MHz
BBase
R2
CCollector
■■hFE Classification
Classification
hFE
4000~20K
EEmitter


Part Number C2062
Description NPN Transistor
Maker Yuejing
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C2062 Datasheet PDF






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