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C781L Datasheet Preview

C781L Datasheet

HIGH POWER THYRISTOR

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Technical Data :
C 781L - Power Thyristor
Page 1 of 3
2000 VDRM;
**********************************************************************************************************
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Linear Amplifying Gate Configuration
. Blocking capabilty up to 2000 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
CASE 5T
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
C781L
2000
2000
2100
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
150 mA (3)
500 V/sec
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 F capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Conducting - on state
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cpstcle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol
IT(AV)
ITRMS
Min.
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max. Typ.
2500
3925
45000
41500
8.5x106
400
100
1.90
200
100
Units
A
A
Conditions
Sinewave,180o conduction,Tc=65oC
Nominal value
A 8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A 10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A2s 8.3 msec and 10.0 msec
mA VD = 24 V; RL= 12 ohms
mA VD = 24 V; I = 2.5 A
V ITM = 7850 A; Duty cpstcle 0.01%
A/s
A/s
Switching from VDRM 1000 V,
non-repetitive
Switching from VDRM 1000 V




YZPST

C781L Datasheet Preview

C781L Datasheet

HIGH POWER THYRISTOR

No Preview Available !

ELECTRICAL CHARACTERISTICS AND RATINGS
Thyristor
Technical Data :
Page 2 of 3
C781L - Power
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol Min.
PGM
PG(AV)
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
15
300
200
125
5
4
0.30
Peak negative voltage
VGRM
15
A
mA VD = 6 V;RL = 3 ohms;Tj = -40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = -40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery current
Symbol Min.
td
tq
Irr
Max. Typ. Units
2.5 s
3.0
250 s
400
A
200
Conditions
ITM = 50 A; VD = 1500 V
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 s; tp = 20 s
ITM > 2000 A; di/dt = 10 A/s;
VR -50 V; Re-applied dV/dt = 20
V/s linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cpstcle 0.01%
ITM > 2000 A; di/dt = 10 A/s;
VR -50 V
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol Min. Max. Typ.
Tj -40 +125
Tstg -40 +150
Units
oC
oC
Conditions
Thermal resistance - junction to
case
Thermal resistamce - case to sink
Mounting force
Weight
R(j-c)
R(c-s)
P
W
8000
35.5
0.012
0.002
10000
44.4
oC/W
oC/W
lb.
kN
3.5 Lb.
1.60 Kg.
Double sided cooled
Single sided cooled
Double sided cooled *
Single sided cooled *
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data
Technical Data :


Part Number C781L
Description HIGH POWER THYRISTOR
Maker YZPST
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C781L Datasheet PDF






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