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C431PM Datasheet Preview

C431PM Datasheet

HIGH POWER THYRISTOR

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Technical Data :
C431PM
Page 1 of 3
- Power Thyristor
1600 VDRM;
*********************************************************************************************************
HIGH POWER THYRISTOR FOR PHASE CONTROL
APPLICATIONS
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Blocking capabilty up to 1600 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
C431PM
1600
1600
1700
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise (4)
IRRM / IDRM
dV/dt
30 mA (3)
200 V/sec
Conducting - on state
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 F capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cPSTCle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol Min.
IT(AV)
ITRMS
ITSM
Max. Typ.
600
940
7500
7200
I2t 235000
IL 800
IH 400
VTM 2.30
di/dt 200
di/dt 100
Units
A
A
A
A
A2s
mA
mA
V
A/s
A/s
Conditions
Sinewave,180o conduction,Tc =65oC
Nominal value
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
8.3 msec and 10.0 msec
VD = 24 V; RL= 12 ohms
VD = 24 V; I = 2.5 A
ITM = 2000 A; Duty cPSTCle 0.01%
Switching from VDRM 1000 V,
non-repetitive
Switching from VDRM 1000 V




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C431PM Datasheet Preview

C431PM Datasheet

HIGH POWER THYRISTOR

No Preview Available !

Technical Data :
ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbo
l
PGM
PG(AV)
Min.
Max. Typ.
200
5
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10
300
150
125
5
3
0.15
Peak negative voltage
VGRM
5
Page 2 of 3
C431PM - Power Thyristor
Units Conditions
W tp = 40 us
W
A
mA VD = 6 V;RL = 3 ohms;Tj = -40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = -40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery charge
Symbo
l
td
Min.
tq
Qrr
Max. Typ. Units Conditions
1.5 0.7 s
ITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 s; tp = 20 s
200 125 s
ITM = 500 A; di/dt = 25 A/s;
VR -50 V; Re-applied dV/dt = 20
V/s linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle 0.01%
* C ITM = 500 A; di/dt = 25 A/s;
VR -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol Min. Max. Typ.
Tj -40 +125
Tstg -40 +150
Units
oC
oC
Conditions
Thermal resistance - junction to
case
Thermal resistamce - junction to
case
Thermal resistance - case to sink
Mounting force
Weight
R(j-c)
R(j-c)
R(c-s)
P
W
0.045
(1)
0.090
(1)
800
3.6
0.055
(2)
0.110
(2)
.030
.060
2500
11.1
oC/W
oC/W
oC/W
lb.
kN
2.5 oz.
70 g
Double sided cooled *
(1) @ 2000 lb.; (2) @ 800 lb.
Single sided cooled *
(1) @ 2000 lb.; (2) @ 800 lb.
Double sided cooled *
Single sided cooled *
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data


Part Number C431PM
Description HIGH POWER THYRISTOR
Maker YZPST
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C431PM Datasheet PDF






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