The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SOT-23 (SOT-23 Field Effect Transistors)
GMS2302AL
N-Channel Enhancement-Mode MOS FETs
N MOS
■MAXIMUM RATINGS
Characteristic
Symbol
Drain-Source Voltage -
Gate- Source Voltage -
Drain Current (continuous) -
Drain Current (pulsed) -
Total Device Dissipation
TA=25℃ 25℃
Junction
BVDSS VGS ID IDM PD TJ
Storage Temperature
Tstg
■DEVICE MARKING GMS2302AL=A2SHB
Max 20 +8 2.