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1N4448M - 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

Features

  • Fast Switching Device (TRR.

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Datasheet Details

Part number 1N4448M
Manufacturer YS
File Size 530.74 KB
Description 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes
Datasheet download datasheet 1N4448M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes 1N4448M AXIAL LEAD DO34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 500 mW TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature +175 °C WIV Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA IFSURGE Peak Forward Surge Current 2A These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Fast Switching Device (TRR <4.
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