YMP230N55 datasheet, mosfet equivalent, YM

Features and benefits

* VDS=55V；ID=230A@ V GS =10V； RDS(ON)< 3 mΩ @ VGS =10V
* Special process technology for high ESD capability
* Special designed for Convertors and power contro.

Application

Features
* VDS=55V；ID=230A@ V GS =10V； RDS(ON)< 3 mΩ @ VGS =10V
* Special process technology for high ESD capa.

Description

The YMP230N55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features
* VDS=55V；ID=230A@ V GS =10V； RDS(ON)< .

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