WS1A3640 Datasheet GaN on SiC Power Amplifier

Manufacturer: Wolfspeed

WS1A3640 gan on sic power amplifier by Wolfspeed - Datasheet Preview

Datasheet Details

Part number	WS1A3640
Manufacturer	Wolfspeed
File Size	416.24 KB
Description	GaN on SiC Power Amplifier
Datasheet	WS1A3640 Datasheet

General Description

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.

The WS1A3640 has been designed to operate from 3300 MHz to 3800 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crestfactor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more.

The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

Overview

WS1A3640 GaN on SiC Power Amplifier Module for 5G.

Key Features

GaN on SiC technology.
Frequency: 3300-3800 MHz.
Average Output Power: 39.5 dBm.
PSAT = 48 dBm.
RF inputs matched to 50 Ω and DC matched blocked.
Gate bias supply for main and peak sides available from either side of device.
Integrated harmonic terminations.
Pb-free and RoHS compliant WS1A3640 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in Wolfspeed.

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