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PTAC210802FC - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band.

Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture 19 55 Efficiency 18 50 17 45 16 Gain 40 15 35 14 3.

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Datasheet Details

Part number PTAC210802FC
Manufacturer Wolfspeed
File Size 609.47 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTAC210802FC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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