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PTAB182002FC Datasheet Preview

PTAB182002FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTAB182002FC
Thermally-Enhanced High Power RF LDMOS FET
190 W, 28 V, 1805 – 1880 MHz
Description
The PTAB182002FC is a 190-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1880 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Wolfspeed's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 530 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8:1,
10 MHz carrier spacing, 3.84MHz BW
17 55
50
16 45
Gain
40
15 35
30
14 25
Efficiency
20
13
b182002fc gr1
15
36 38 40 42 44 46 48
Average Output Power (dBm)
PTAB182002FC
Package H-37248-4
Features
Asymmetric Doherty design
- Main: P1dB = 70 W Typ
- Peak: P1dB = 120 W Typ
Broadband internal matching
Typical two-carrier WCDMA performance at
1842 MHz, 28 V (Doherty configuration)
- Average output power = 44.6 dBm
- Linear Gain = 15.5 dB
- Efficiency = 46%
- IMD = –25 dBc
Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
Integrated ESD protection
Capable of handling 3:1 VSWR @ 30 V,
50 W (average) output power (one-carrier WCDMA
signal, 10 dB PAR, Doherty test fixture)
Pb-free and RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Wolfspeed Doherty test fixture)
VDD = 28 V, VGSPK = (VGS at IDQ = 900 mA)–1.80 V, IDQ = 520 mA, POUT = 29 W avg., ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 7.5 dB PAR
Characteristic
Symbol
Gain
Drain Efficiency
Intermodulation Distortion
Gps
hD
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Min
14.5
42
Typ
15.5
44
–26.5
Max
–24
Unit
dB
%
dBc
Rev. 05, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com




Wolfspeed

PTAB182002FC Datasheet Preview

PTAB182002FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTAB182002FC
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain Leakage Current
On-state Resistance (main)
On-state Resistance (peak)
Operating Gate Voltage (main)
Operating Gate Voltage (peak)
Gate Leakage Current
Conditions
Symbol
VGS = 0 V, IDS = 10 mA
V(BR)DSS
VDS = 28 V, VGS = 0 V
IDSS
VDS = 63 V, VGS = 0 V
IDSS
VGS = 10 V, VDS = 0.1 V
RDS(on)
VGS = 10 V, VDS = 0.1 V
RDS(on)
VDS = 28 V, IDQ = 520 mA VGS
VDS = 28 V, IDQ = 0 mA
VGS
VGS = 10 V, VDS = 0 V
IGSS
Min
65
2.5
0.7
Typ
0.15
0.09
3.0
1.1
Max
1.0
10.0
3.5
1.5
1.0
Unit
V
µA
µA
W
W
V
V
µA
Maximum Ratings
Parameter
Symbol
Drain-source Voltage
VDSS
Gate-source Voltage
VGS
Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance (main, TCASE = 70°C, 80 W CW class AB)
Thermal Resistance (peak, TCASE = 70°C, 110 W CW class C)
RqJC
RqJC
Value
65
–6 to +10
200
–40 to +150
0.86
0.64
Unit
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version Order Code
PTAB182002FC V1 R0 PTAB182002FC-V1-R0
PTAB182002FC V1 R250 PTAB182002FC-V1-R250
Package and Description Shipping
H-37248-4, ceramic open-cavity, earless flange
Tape & Reel, 50 pcs
H-37248-4, ceramic open-cavity, earless flange
Tape & Reel, 250 pcs
2
Rev. 05, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com


Part Number PTAB182002FC
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Wolfspeed
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