Datasheet Details
| Part number | GTVA355001EC |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 539.28 KB |
| Description | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Datasheet |
 GTVA355001EC Datasheet
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General Description
The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.
They feature input and output matching, high efficiency, and a thermally-enhanced packages.
Key Features
- GaN on SiC HEMT technology.
- Broadband internal input and output matching.
- Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB.
- Pb-free and RoHS compliant GTVA355001FC Package H-37248-2 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 500 W, ƒ = 3500 MHz, pulse width = 3.