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GTVA355001EC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

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Datasheet Details

Part number: GTVA355001EC
Manufacturer: Wolfspeed
File Size: 539.28 KB
Datasheet: GTVA355001EC-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA355001EC Product details

Description

The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band..

Features

GaN on SiC HEMT technology.
Broadband internal input and output matching.
Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB.
Pb-free and RoHS compliant GTVA355001FC Package H-37248-2 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 500 W, ƒ = 3500 MHz, pulse width = 3.

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