GTVA355001EC Datasheet | Wolfspeed

GTVA355001EC/FC Thermally-Enhanced High Power RF Ga N on Si C HEMT 500 W, 50 V, 2900 - 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-watt Ga N on Si C high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and a thermally-enhanced packages. GTVA355001EC Package H-36248-2 Features - Ga N on Si C HEMT technology - Broadband internal input and output matching - Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3d B = 500 W - Drain efficiency = 65% - Gain = 13 d B - Pb-free and Ro HS pliant GTVA355001FC Package H-37248-2 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 m A, POUT = 500 W, ƒ = 3500 MHz, pulse width = 300 µs, duty cycle = 10% Characteristic Gain Drain Efficiency Symbol Min Typ Max Unit Gps - 13 - d B h D - 65 - % All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device- observe handling precautions! Rev. 0.2, 2019-11-07 4600 Silicon Drive | Durham, NC 27703 |...