GTVA355001EC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
* GaN on SiC HEMT technology
* Broadband internal input and output matching
* Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10.
The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and a thermally-enhanced packages.
GTVA35500.
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