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GTVA355001EC Datasheet, Wolfspeed

GTVA355001EC hemt equivalent, thermally-enhanced high power rf gan on sic hemt.

GTVA355001EC Avg. rating / M : 1.0 rating-12

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GTVA355001EC Datasheet

Features and benefits


* GaN on SiC HEMT technology
* Broadband internal input and output matching
* Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10.

Description

The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and a thermally-enhanced packages. GTVA35500.

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TAGS

GTVA355001EC
Thermally-Enhanced
High
Power
GaN
SiC
HEMT
GTVA355001FC
GTVA104001FA
GTVA107001EC
Wolfspeed

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