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E3M0032120K
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET technology
Tab
• Optimized package with separate driver source pin
Drain
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
Drain (Pin 1, TAB)
• Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
1 234
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
Typical Applications • M
E3M0032120K Datasheet
