CMPA601C025D Datasheet Text
CMPA601C025D
25 W, 6.0
- 12.0 GHz, GaN MMIC, Power Amplifier
Description
Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties pared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si, GaAs, and GaN-on-Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
PN: CMPA601C025D
Typical Performance Over 6.0-12.0 GHz (TC = 25˚C)
Parameter
6.0 GHz
8.0 GHz
Small Signal Gain
40.0
42.0
POUT @ PIN = 19 dBm
48.0
49.0
POUT @ PIN = 19 dBm
63.0
79.0
Power Gain @ PIN = 19 dBm
29.0
30.0
PAE @ PIN = 19 dBm
33.0
49.0
Note: All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%
10.0 GHz 43.0 47.4 55.0 28.4 35.0
12.0 GHz 36.0 47.3 54.0 27.3 32.0
Units dB dBm W dB %
Features...
