CMPA601C025D amplifier equivalent, power amplifier.
* 32 dB Small Signal Gain
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30 W Typical PSAT Operation up to 28 V
* High Breakdown Voltage
* High Temperature Operation
* Size 0.172 x 0..
* Jamming Amplifiers
* Test Equipment Amplifiers
* Broadband Amplifiers
* Radar Amplifiers
Rev 2.1
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Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior prop.
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