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CGHV59350 - GaN HEMT

Description

Wolfspeed's CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.

Features

  • 5.2 - 5.9 GHz Operation.
  • 470 W Typical Output Power.
  • 10.7 dB Power Gain.
  • 60% Typical PAE.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription

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CGHV59350 350 W, 5.2 - 5.9 GHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Description Wolfspeed's CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange or pill package. Features • 5.2 - 5.9 GHz Operation • 470 W Typical Output Power • 10.7 dB Power Gain • 60% Typical PAE • 50 Ohm Internally Matched • <0.3 dB Pulsed Amplitude Droop PN: CGHV59350F and CGHV59350P Package Type: 440217 and 440218 Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter Output Power 5.2 GHz 468 5.
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