• Part: CGHV31500F1
  • Description: 500W GaN HEMT
  • Manufacturer: Wolfspeed
  • Size: 2.98 MB
Download CGHV31500F1 Datasheet PDF
Wolfspeed
CGHV31500F1
CGHV31500F1 is 500W GaN HEMT manufactured by Wolfspeed.
- 3.1 GHz, 500 W Ga N HEMT Description Wolfspeed’s CGHV31500F1 is a gallium nitride (Ga N) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in radar architectures. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV31500F1 is based on Wolfspeed’s high power density 50 V, 0.4 μm Ga N on Silicon Carbide (Si C) manufacturing process. The transistor is supplied in a ceramic/metal flange package. Package Type: 440226 PN: CGHV31500F1 Features - PSAT: 500W - DE: >65% - LSG: 13 d B Note: Features are typical performance across frequency under 25°C operation. Please reference performance charts for additional details. Applications - Civil and Military Pulsed Radar Amplifiers Figure 1: Functional Block Diagram Rev. 1.1, 2023-04-24 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without...