CAB450M12XM3 Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Conduction-Optimized Third
- Silicon Nitride Insulator and Copper Baseplate
- 1200 V Drain-Source Voltage
| Manufacturer | Part Number | Description |
|---|---|---|
Cree |
CAB450M12XM3 | Half-Bridge Module |