C3M0065100J mosfet equivalent, silicon carbide power mosfet.
TAB Drain
Drain
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* C3MTM SiC MOSFET technology
* Low parasitic inductance with separate driver source pin
* 7mm of creepage distance between drain an.
* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies .
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