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C3M0021120K1
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
• Optimized package with separate driver source pin
• Lower profile TO-247-4 package body
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
Package
Tab Drain
1 234
Typical Applications • Motor Control • EV Battery Chargers • High Voltage DC/DC Converters • Solar/ESS • UPS • Enterprise PSU Key Parameters
Part Number C3M0021120K1
Package TO-247-4L LP
Marking C3M0021120K1
Parameter Drain - Source
C3M0021120K1 Datasheet
