C3M0015065K Datasheet

Features and Benefits

• C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin
• 8 mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, Ro.