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C3M0015065K - Silicon Carbide Power MOSFET

Key Features

  • C3MTM SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8 mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant TO 247-4 Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package Types: TO-247-4 PN’s: C3M0015065K.

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Other Datasheets by Wolfspeed

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C3M0015065D Silicon Carbide Power MOSFET
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C3M0015065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8 mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant TO 247-4 Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package Types: TO-247-4 PN’s: C3M0015065K Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.