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C3D10065I
3rd Generation 650 V, 10 A Silicon Carbide Schottky
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Package Type: Isolated TO-220-2 Marking: C3D10065I
Wolfspeed, Inc.
C3D10065I Datasheet
