C3D04060F diode equivalent, 4a silicon carbide schottky diode.
Applications
* Optimized for PFC Boost Diode Application
* Zero Reverse Recovery Current / Forward
Recovery Voltage
* Temperature-Independent Switching Beha.
12
Package Type: TO-220-F2 Marking: C3D04060
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With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diode.
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