WFF640 mosfet equivalent, n-channel mosfet.
*
*
RDS(on) (Max 0.18 Ω )@VGS=10V
Symbol
◀
{
2. Drain
Gate Charge (Typical 45nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested.
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for.
Image gallery
TAGS
Download (Size : 888.79KB)