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WFB33N25 - N-Channel MOSFET

General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.094 Ω )@VGS=10V.
  • Gate Charge (Typical 37nC).
  • Improved dv/dt Capability, High Ruggedness.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C) General.

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Datasheet Details

Part number WFB33N25
Manufacturer Wisdom technologies
File Size 106.25 KB
Description N-Channel MOSFET
Datasheet download datasheet WFB33N25 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROVISIONAL Wisdom Semiconductor WFB33N25 N-Channel MOSFET Features ■ RDS(on) (Max 0.094 Ω )@VGS=10V ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3.