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WST3392 - Dual N-Channel MOSFET

Description

The WST3392 is the highest performance trench Dual N-Channel MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Green Device Available WST3392 Dual N-Channel MOSFET Product Summery BVDSS 30V RDS(ON) 46mΩ ID 3.7A.

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Datasheet Details

Part number WST3392
Manufacturer Winsok
File Size 1.30 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WST3392 Datasheet

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Full PDF Text Transcription

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General Description The WST3392 is the highest performance trench Dual N-Channel MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The WST3392 meet the RoHS and Green Product requirement with full function reliability approved. Features ⚫ Advanced high cell density Trench technology ⚫ Super Low Gate Charge ⚫ Excellent CdV/dt effect decline ⚫ Green Device Available WST3392 Dual N-Channel MOSFET Product Summery BVDSS 30V RDS(ON) 46mΩ ID 3.
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