WSP8212 - Dual N-Channel MOSFET

The WSP8212 is the highest performance trench Dual N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

• z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available WSP8212 Dual N-Channel MOSFET Product Summery BVDSS 20V RDSON 10mΩ ID 11A.