WSD8823DN22 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode.
the tiny and thin outline saves PCB consumption.
| Part number | WSD8823DN22 |
|---|---|
| Manufacturer | Winsok |
| File Size | 732.67 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 WSD8823DN22 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| WSD1030CT | D-PAK Surface Mount Schottky Barrier Rectifiers | Weitron Technology |
| WSD1035CT | D-PAK Surface Mount Schottky Barrier Rectifiers | Weitron Technology |
| WSD1040CT | D-PAK Surface Mount Schottky Barrier Rectifiers | Weitron Technology |
| WSD1045CT | D-PAK Surface Mount Schottky Barrier Rectifiers | Weitron Technology |
| WSD109H | Surface Mount Schottky Barrier Diodes | Weitron Technology |
| Part Number | Description |
|---|---|
| WSD86P10DN56 | P-Channel MOSFET |
| WSD1006GDN22 | N-Channel MOSFET |
| WSD100N06GDN56 | N-Channel MOSFET |
| WSD2010DN25 | Dual N-Channel MOSFET |
| WSD2012DN25 | Dual N-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
