* 6A,700V, RDS(on)(Max 1.5Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 51nC)
* High Current Capability
* 100%Avalanche Tested
* Maximum Junction Tempera.

This Power MOSFET is produced using Winsemi’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high ef.

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