WFU4N60 mosfet equivalent, silicon n-channel mosfet.
* 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 16nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Isolation Voltage ( VIS.
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well S.
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