WFP840C mosfet equivalent, power mosfet.
� 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
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This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well s.
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