WFP3205T mosfet equivalent, silicon n-channel mosfet.
* 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V
* Ultra-low Gate charge(Typical 50nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Tempe.
This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche c.
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