WFJ8N65B mosfet equivalent, power mosfet.
� 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maxim.
This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well.
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