* 18A,500V,RDS(on)(Max0.31Ω)@VGS=10V
* Ultra-low Gate charge(Typical 37.9nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Tem.

Silicon N-Channel MOSFET Features
* 18A,500V,RDS(on)(Max0.31Ω)@VGS=10V
* Ultra-low Gate charge(Typical 37.9nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temperature Range(150℃) General Description This.

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