SFP50N06 mosfet equivalent, silicon n-channel mosfet.
* RDS(on)(Max 22mΩ)@VGS=10V
* Ultra-low Gate Charge(Typical 31nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temperature Ra.
in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching tra.
This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, s.
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