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SFTN60R Datasheet Preview

SFTN60R Datasheet

N-Channel MOSFET

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SFTN60R
N-Channel Enhancement Mode MOSFET
1.Gate 2.Drain 3.Source
TO-252 Plastic Package
Drain
Gate
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Peak Drain Current
TC = 25℃
TC = 100℃
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Characteristics
Parameter
Maximum Thermal Resistance from Juntion to Case
Maximum Thermal Resistance from Juntion to Ambient
Symbol
RθJC
RθJA
Source
Value
600
± 30
1.9
1.2
7.6
42
- 55 to + 150
Unit
V
V
A
A
W
Max.
2.98
110
Unit
/W
/W
Winning
Team
互創國際
Dated: 16/03/2016 Rev: 01




Winning Team

SFTN60R Datasheet Preview

SFTN60R Datasheet

N-Channel MOSFET

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SFTN60R
Characteristics at Ta = 25
Parameter
Drain-Source Breakdown Voltage
at ID = 250 µA
Drain-Source Leakage Current
at VDS = 600 V
Gate Leakage Current
at VGS = ± 30 V
Gate-Source Threshold Voltage
at VDS = VGS, ID = 250 uA
Drain-Source On-State Resistance
at VGS = 10 V, ID = 0.95 A
Forward Transconductance
at VDS = 30 V, ID = 1 A
Diode Forward Voltage
at IS = 1.9 A, VGS= 0 V
Maximun Body-Diode Continuous Current
Input Capacitance
at VGS = 0 V, VDS = 25 V, f = 1 MHz
Output Capacitance
at VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-On Delay Time
at ID = 2 A, VGS = 10 V, VDS = 300 V, RG= 25
Turn-On Rise Time
at ID = 2 A, VGS = 10 V, VDS = 300 V, RG= 25
Turn-Off Delay Time
at ID = 2 A, VGS = 10 V, VDS = 300 V, RG= 25
Turn-Off Fall Time
at ID = 2 A, VGS = 10 V, VDS = 300 V, RG= 25
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VSD
IS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
600
-
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
0.5
-
4.6
-
-
-
10.6
29.6
40.4
38.4
Max.
-
1
100
5
4.5
-
1.4
-
360
2
40
-
-
-
-
Unit
V
µA
nA
V
S
V
A
pF
pF
pF
ns
ns
ns
ns
Winning
Team
互創國際
Dated: 16/03/2016 Rev: 01


Part Number SFTN60R
Description N-Channel MOSFET
Maker Winning Team
Total Page 4 Pages
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