Fast switching capability
Drain Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Peak Drain Current1)
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Rang
1) Repetitive Rating : Pulse width limited by TJ. Symbol VDS VGS ID IDM PD
TJ, Tstg
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Cas.
Full PDF Text Transcription for SFTN60AR (Reference)
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SFTN60AR. For precise diagrams, and layout, please refer to the original PDF.
SFTN60AR N-Channel Enhancement Mode MOSFET Features • High voltage power MOSFET • Fast switching capability Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Packa...
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ability Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current1) Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Rang 1) Repetitive Rating : Pulse width limited by TJ. Symbol VDS VGS ID IDM PD TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Value 600 ± 30 2 8 44 - 55 to + 150 Max. 2.
SFTN60AR Datasheet
