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SFTN60AR Datasheet Preview

SFTN60AR Datasheet

N-Channel MOSFET

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SFTN60AR
N-Channel Enhancement Mode MOSFET
Features
• High voltage power MOSFET
• Fast switching capability
Drain
Gate
Source
1.Gate 2.Drain 3.Source
TO-252 Plastic Package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Peak Drain Current1)
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Rang
1) Repetitive Rating : Pulse width limited by TJ.
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Characteristics
Parameter
Maximum Thermal Resistance from Juntion to Case
Maximum Thermal Resistance from Juntion to Ambient
Symbol
RθJC
RθJA
Value
600
± 30
2
8
44
- 55 to + 150
Max.
2.87
100
Unit
V
V
A
A
W
Unit
/W
/W
Winning
Team
互創國際
Dated: 08/05/2017




Winning Team

SFTN60AR Datasheet Preview

SFTN60AR Datasheet

N-Channel MOSFET

No Preview Available !

SFTN60AR
Characteristics at Tj = 25unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
at ID = 250 µA
Gate-Source Threshold Voltage
at VDS = VGS, ID = 250 uA
Drain-Source Leakage Current
at VGS = 600 V
at VDS = 480 V, TC = 125
Gate Leakage Current
at VGS = ± 30 V
Drain-Source On-State Resistance
at VGS = 10 V, ID = 1 A
Diode Forward Voltage
at IS = 2 A, VGS= 0 V
Input Capacitance
at VGS = 0 V,VDS = 25 V, f = 1 MHz
Output Capacitance
at VGS = 0 V,VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at VGS = 0 V,VDS = 25 V, f = 1 MHz
Turn-On Delay Time
at ID = 2.4 A, VDS = 300 V, RG= 25
Turn-On Rise Time
at ID = 2.4 A, VDS = 300 V, RG= 25
Turn-Off Delay Time
at ID = 2.4 A, VDS = 300 V, RG= 25
Turn-Off Fall Time
at ID = 2.4 A, VDS = 300 V, RG= 25
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
VSD
Ciss
Coss
Crss
ton
tr
toff
tf
Min.
600
2
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
4
10
100
± 100
5
1.4
350
50
13
60
55
120
60
Unit
V
V
µA
nA
V
pF
pF
pF
ns
ns
ns
ns
Winning
Team
互創國際
Dated: 08/05/2017


Part Number SFTN60AR
Description N-Channel MOSFET
Maker Winning Team
Total Page 4 Pages
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