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SFTN6016MP Datasheet Preview

SFTN6016MP Datasheet

N-Channel MOSFET

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SFTN6016MP
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Drain Current - Continuous 1)
Drain Current – Pulse 2)
TC = 25
TC = 100
Power Dissipation 3)
TC = 25
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Thermal Characteristics
Parameter
Symbol
Thermal Resistance - Junction to Ambient 1)
Thermal Resistance - Junction to Case 1)
1) The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2) The data tested by pulsed , pulse width 300µs , duty cycle 2%.
3) The power dissipation is limited by 150junction temperature.
RθJA
RθJC
Value
60
± 20
44
28
100
42
- 55 to + 150
Max.
75
3
Unit
V
V
A
A
W
Unit
/W
/W
Winning
Team
互創國際
Dated: 20/07/2017 Rev:01




Winning Team

SFTN6016MP Datasheet Preview

SFTN6016MP Datasheet

N-Channel MOSFET

No Preview Available !

SFTN6016MP
Characteristics at Tj = 25unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
at ID = 250 µA
Gate-Source Threshold Voltage
at VGS = VDS, ID = 250 μA
Drain-Source Leakage Current
at VDS = 48 V,TJ = 25
at VDS = 48 V,TJ = 55
Gate-Source Leakage Current
at VGS = ± 20 V
Drain-Source On-State Resistance
at VGS = 10 V, ID = 8 A
at VGS = 4.5 V, ID = 6 A
Forward Transconductance
at VDS = 5 V, ID = 8 A
Input Capacitance
at VGS = 0 V,VDS = 15 V, f = 1 MHz
Output Capacitance
at VGS = 0 V,VDS = 15 V, f = 1 MHz
Reverse Transfer Capacitance
at VGS = 0 V,VDS = 15 V, f = 1 MHz
Turn-On Delay Time
at VGS = 10 V, VDD = 30 V, RG = 3.3 , ID = 8 A
Turn-On Rise Time
at VGS = 10 V, VDD = 30 V, RG = 3.3 , ID = 8 A
Turn-Off Delay Time
at VGS = 10 V, VDD = 30 V, RG = 3.3 , ID = 8 A
Turn-Off Fall Time
at VGS = 10 V, VDD = 30 V, RG = 3.3 , ID = 8 A
Symbol
BVDSS
VGSth
Min.
60
1.2
Typ. Max. Unit
- -V
- 2.5 V
IDSS
IGSS
-
-
-
- 1 µA
-5
- ± 100 nA
RDS(on)
|gFS|
-
-
-
- 12 m
- 15
75 - S
Ciss
-
3240
-
pF
Coss - 210 - pF
Crss - 146 - pF
td(on)
- 10.4 -
ns
tr - 9.2 - ns
td(off)
-
63
- ns
tf - 4.8 - ns
Drain-Source Diode Characteristics and Maximum Ratings
Parameter
Symbol
Max.
Continuous Source-Drain Diode Current 1) 3)
IS 44
Pulsed Diode Forward Current 2) 3)
ISM 100
1) The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2) The data tested by pulsed , pulse width 300μs , duty cycle 2%.
3) The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
A
Winning
Team
互創國際
Dated: 20/07/2017 Rev:01


Part Number SFTN6016MP
Description N-Channel MOSFET
Maker Winning Team
Total Page 4 Pages
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