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SFTN6011 Datasheet Preview

SFTN6011 Datasheet

N-Channel MOSFET

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SFTN6011
N-Channel Enhancement Mode Power MOSFET
Drain
Gate
Source
TO-220FB Plastic Package
1.Gate 2.Drain 3.Source
Absolute Maximum Ratings
Parameter
Gate-Source Voltage
Drain Current
Peak Drain Current
TC = 25℃
TC = 100℃
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol
VGS
ID
IDM
Ptot
TJ, Tstg
Value
± 20
11
7
22
125
- 55 to + 150
Unit
V
A
A
W
Thermal Characteristics
Parameter
Maximum Thermal Resistance from Juntion to Case
Maximum Thermal Resistance from Juntion to Ambient
Symbol
RθJC
RθJA
Max.
1
62
Unit
/W
/W
Winning
Team
互創國際
Dated: 03/05/2017




Winning Team

SFTN6011 Datasheet Preview

SFTN6011 Datasheet

N-Channel MOSFET

No Preview Available !

SFTN6011
Characteristics at TC = 25unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
at ID = 0.25 mA
Drain-Source Leakage Current
at VDS = 600 V,
TJ = 25
TJ = 150
Gate Leakage Current
at VGS = ± 20 V
Gate-Source Threshold Voltage
at VDS = VGS, ID = 500 μA
Drain-Source On-State Resistance
at VGS = 10 V, ID = 7 A
Input Capacitance
at VGS = 0 V, VDS = 25 V, f = 1 MHz
Output Capacitance
at VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-On Delay Time
at ID = 11 A, VDD = 350 V, VGS = 10 V, RG= 6.8
Turn-On Rise Time
at ID = 11 A, VDD = 350 V, VGS = 10 V, RG= 6.8
Turn-Off Delay Time
at ID = 11 A, VDD = 350 V, VGS = 10 V, RG= 6.8
Turn-Off Fall Time
at ID = 11 A, VDD = 350 V, VGS = 10 V, RG= 6.8
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
600
-
-
-
3.5
-
-
-
-
-
-
-
-
Typ.
-
Max.
-
-
-
-
-
-
1460
610
21
130
35
150
20
25
250
± 100
5.5
0.38
-
-
-
-
-
225
30
Unit
V
µA
nA
V
pF
pF
pF
ns
ns
ns
ns
Drain-Source Body Diode Rating Characteristics
Parameter
Source Drain Current
Source Drain Current - Pulsed
Drain-Source Diode Forward Voltage at ISD = 18 A
Symbol
ISD
ISDM
VSD
Max.
11
22
1.2
Unit
A
A
V
Winning
Team
互創國際
Dated: 03/05/2017


Part Number SFTN6011
Description N-Channel MOSFET
Maker Winning Team
Total Page 4 Pages
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