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SFTN2906
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
Drain Current at VGS = 10 V
VGS
± 20
V
TC = 25℃ TC = 100℃
ID
84 59
A
Peak Drain Current
TC = 25℃
IDM
336
A
Power Dissipation
TC = 25℃
Ptot
38
W
Single Pulse Avalanche energy at ID = 84 A , RGS = 25 Ω
EAS
140
mJ
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
℃
Thermal Characteristics Parameter
Symbol
Max.
Unit
Maximum Thermal Resistance from Juntion to Case
RθJC
3.9
K/W
Winning Team
Dated: 24/11/2017
SFTN2906
Characteristics at TJ = 25℃ unless otherwise specified
Parameter
Symbol Min.
Typ.
Max.
SFTN2906 Datasheet
