Full PDF Text Transcription for SFTN1850 (Reference)
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SFTN1850 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Drain-S...
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Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Drain-Source Voltage Gate-Source Voltage Drain Current 1) TC = 25℃ Peak Drain Current 1) 2) Avalanche energy,single pulse 3) TC = 100℃ Power Dissipation TC = 25℃ Maximum Thermal Resistance from Juntion to Case2) Maximum Thermal Resistance from Juntion to Ambient 2) VDS VGS ID IDM EAS Ptot RθJC RθJA 500 ± 30 18 11 72 950 37 3.4 62.5 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 1) Id limitedby maximumjunctiontemperature. 2) Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 3) L = 5.3 mH, IAS =
SFTN1850 Datasheet
