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SFTN1003MP
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Drain Current - Continuous
TC = 25℃ TC = 100℃
Peak Drain Current (Pulse Width ≤ 300 μs)
Power Dissipation
TC = 25℃ TC = 100℃
Operating Junction and Storage Temperature Range
Thermal Characteristics Parameter
Thermal Resistance - Junction to Ambient Thermal Resistance - Junction to Case
Steady State Steady State
Symbol VDS VGS ID IDM PD
Tj, Tstg
Symbol RθJA RθJC
Value 100 ± 25 55 35 130 54 21 - 55 to + 150
Max. 60 2.
SFTN1003MP Datasheet
