Full PDF Text Transcription for SFTN0825R (Reference)
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SFTN0825R. For precise diagrams, and layout, please refer to the original PDF.
SFTN0825R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Symbol Value Unit Drain-So...
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Package Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ±30 V Drain Current TC = 25℃ TC = 100℃ ID 8 5 A Peak Drain Current Avalanche energy,single pulse 1) IDM 16 A EAS 132 mJ Avalanche current, single pulse 2) IAS 2.1 A Power Dissipation TC = 25℃ PD 78 W Operating Junction and Storage Temperature Range TJ,Tstg - 50 to 150 ℃ Thermal Characteristics Parameter Symbol Max. Thermal Resistance from Juntion to Ambient 3) RθJA 55 Thermal Resistance from Juntion to Case RθJC 1) L= 60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C.
SFTN0825R Datasheet
