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Wing Shing Computer

C4596E Datasheet Preview

C4596E Datasheet

2SC4596E

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2SC4596E
SILICON EPITAXIAL PLANNAR TRANSISTOR
GENERAL DESCRIPTION
wwwH.diagtahshfereet4quu.ceomncy, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VBE
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Emitter forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
TO-220F
Tmb 25
IC = 2A; IB = 0.2A
IE = 2A
IC=2A,IB1=-IB2=0.2A,VCC=30V
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 30MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=100V
VEB=5V
IC=1mA
IC =2A; IB = 0.2A
IC =1A; VCE = 5V
IC =0.5A; VCE = 10V
VCB = 10V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
IC=2A,IB1=-IB2=0.2A,VCC=30V
MIN MAX UNIT
- 100 V
- 60 V
- 5A
-A
- 25 W
- 1.5 V
1.5 V
0.5 s
MIN MAX UNIT
- 100 V
- 60 V
5V
- 5A
- 1A
- 25 W
-55 150
- 150
MIN MAX UNIT
0.1 mA
0.1 mA
60 V
1.5 V
100 200
120 MHz
80 pF
0.5 us
1.5 us
0.5 us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com


Part Number C4596E
Description 2SC4596E
Maker Wing Shing Computer
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C4596E Datasheet PDF






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