The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SA1011
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
www.DataSheet4U.com
TO-220
!
Complement to 2SC2073
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -180 -160 -5 -3 10 150 -50~150 Unit V V V A W
℃ ℃
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= -120V , IE=0 VEB= -5V , IC=0 VCE= -10V ,IC=-0.5A IC=-0.5A ,IB=--50mA VCE= -10V ,IC=-0.5A Min Typ Max -10 -10 200 -1.
A1011 Datasheet
