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PGP15TD60 Datasheet Preview

PGP15TD60 Datasheet

Trench FS II IGBT

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600V, 15A, Trench FS II IGBT
General Description:
Using WOS's proprietary trench design and advanced FS (field stop) second
generation technology, the 600V Trench FS II IGBT offers superior conduction and
switching performances, and easy parallel operation;
Features
Trench FSII Technology offering
Very low VCEsat
High speed switching
Positive temperature coefficient in VCEsat
Very tight parameter distribution
High ruggedness, temperature stable behavior
Application
Air Condition
Inverters
Motor drives
Schematic diagram
Package Marking and Ordering Information
Device
Device Package
Device Marking
PGB15TD60
TO-263
PGB15TD60
PGP15TD60
TO-220
PGP15TD60
PGF15TD60
TO-220F
PGF15TD60
TO-263
TO-220
Absolute Maximum Ratings (TC=25unless otherwise noted)
Symbol
Parameter
PGB15TD60
PGP15TD60
PGF15TD60
VCES
Collector-Emitter Voltage
600
VGES
Gate- Emitter Voltage
±30
Collector Current
IC
Collector Current @TC = 100 °C
30 30*
15 15*
ICplus
Pulsed Collector Currenttp limited by Tjmax
45 45
- turn off safe operating areaVCE=600VTj=150
45
45
IF Diode Continuous Forward Current @TC = 100 °C 15 15*
IFM Diode Maximum Forward Current
45 45
Power Dissipation @ TC = 25°C
PD
Power Dissipation @TC = 100 °C
105 35
42 12.8
TJ,Tstg
Operating Junction and Storage Temperature Range
-55 to +150
TL Maximum Temperature for Soldering
Short circuit withstand time VGE=15.0V, VCC 400V,
tsc Allowed number of short circuits<1000Time between
short circuits:1.0s,Tj150
260
10
TO-220F
Units
V
V
A
A
A
A
A
A
W
W
us
Wing On STS Ltd.
Page 1
v1.0




Wing On

PGP15TD60 Datasheet Preview

PGP15TD60 Datasheet

Trench FS II IGBT

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Thermal Characteristic
Symbol
Parameter
RθJC Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
PGB15TD60
PGP15TD60
1.19
1.92
62
PGF15TD60
3.6
3.9
78
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
OFF Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
VGE=0V,ICE=1mA
ICES Collector-Emitter Leakage Current
VGE =0V,VCE=600V
IGES(F)
Gate to Emitter Forward Leakage
VGE=+30V,VCE=0V
IGES(R)
Gate to Source Reverse Leakage
VGE=-30V,VCE =0V
ON Characteristics
VCE(sat)
Collector-Emitter Saturation Voltage
IC=15A,VGE=15V
VGE(th)
Gate Threshold Voltage
IC=1mA,VCE=VGE
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QGate
Gate charge
IC(SC)
Short circuit collector current Max.1000
short circuits Time between short circuits:
1.0s
Switching Characteristics
VCE=25V,VGE=0V,
f=1MHz
VCC=480V, IC=15A
VGE=15V
VGE=15V,VCC400V,
tSC10us,Tj150
td(ON)
Turn-on Delay Time
tr Rise Time
td(OFF)
tf
Turn-Off Delay Time
Fall Time
VCE=400V,IC=15A
VGE=0/15V, Rg=15Ω
Eon Turn-On Switching Loss
Inductive Load
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Min.
600
--
--
--
--
4.0
--
--
--
--
--
--
--
--
--
--
--
--
Rating
Typ.
--
--
--
--
1.8
5.0
649
61
27
75
70
17
18
114
41
0.60
0.38
0.98
Max.
--
4
100
100
2.0
6.0
--
--
--
--
--
--
--
--
--
--
--
--
Units
/W
/W
/W
Units
V
uA
nA
nA
V
V
pF
nC
A
ns
mJ
Electrical Characteristics of the DiodeTC= 25unless otherwise specified):
Symbol
Parameter
Test Conditions
Rating
Min. Typ. Max.
VFM Diode Forward Voltage
IF=15A
-- 1.45 1.7
Trr Reverse Recovery Time
Vcc=400V, IF=15A,
IRRM Diode Peak Reverse Recovery Current
di/dt=800A/uS
Qrr Reverse Recovery Charge
-- 122
-- 13
-- 1.04
--
--
--
Pulse width ttp≤380µs,δ≤2%
Units
V
ns
A
uC
Wing On STS Ltd.
Page 2
v1.0


Part Number PGP15TD60
Description Trench FS II IGBT
Maker Wing On
Total Page 5 Pages
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