 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Ch.

PFU3N80

PFU3N70HG

PFU3N90EG

PFU3N90G

PFU3N95EG

PFU3N95G

PFU1000

PFU1N60

PFU1N70

PFU2N100G

PFU2N60

PFU2N65

PFU2N70G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts