PFP2N60 - N-Channel Super Junction MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V.

PFP2N60 n-channel super junction mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFP2N60
Manufacturer	Wing On
File Size	1.21 MB
Description	N-Channel Super Junction MOSFET
Datasheet	PFP2N60 Datasheet

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Full PDF Text Transcription (Reference)

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Aug 2006 PFP2N60 / PFF2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP2N60 / PFF2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.