 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Ch.

PFM1N60

PFM1N80

PFM1412DEB7V

PFM18030

PFM19030

PFM0812HE-01BFY

PFM21030

PFM50

PFM75

PFMD

PFMD.035.2

PFMF.010.2

PFMF.014.2

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