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PFJ60R180 - N-Channel Super Junction MOSFET

Key Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A Drain  Gate .
  • ◀▲.
  •  Source TO-247 TO-3P.

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Datasheet Details

Part number PFJ60R180
Manufacturer Wing On
File Size 2.59 MB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFJ60R180 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PFJ60R180 / PFW60R180 PFJ60R180 / PFW60R180 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A Drain  Gate  ● ◀▲ ● ●  Source TO-247 TO-3P APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3.