New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested
BVDSS = 700 V RDS(on) = 0.52Ω ID = 8.0 A
Drain
Gate
.
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PFP70R590 / PFF70R590
PFP70R590 / PFF70R590
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested
BVDSS = 700 V RDS(on) = 0.52Ω ID = 8.0 A
Drain
Gate
●
◀▲
● ●
Source
APPLICATION
Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS)
TO-220
G DS
TO-220F
G DS
Absolute Maximum Ratings TC=25oC unless otherwise specified
Symbol
Parameter
PFP70R590 PFF70R590
VDS Drain-Source Voltage (VGS=0V)
Drain Current
– Continuous (TC = 25oC)
ID
Drain Current
– Continuous (TC = 100oC)
700 8.0 8.0* 5.0 5.
PFF70R590 Datasheet
