W967D6HB cellularram equivalent, cellularram.
*Supports asynchronous, page, and burst operations
* VCC, VCCQ Voltages:
1.7V
–1.95V VCC 1.7V
–1.95V VCCQ
* Random access time.
The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramati.
128Mb Async./Page,Syn./Burst CellularRAM
Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industry.
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