W29N08GW
Description
The W29N08GW/Z (8G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power.
Key Features
- Basic Features - Density : 8Gbit (2 chip stacked solution) - Vcc : 1.7V to 1.95V - Bus width : x8/x16 - Operating temperature
- Industrial: -40°C to 85°C Single-Level Cell (SLC) technology. Organization
- Density: 8G-bit/1G-byte - Page size
- 1,056 words (1024 + 32 words) - Block size
- 64 pages (64K + 2K words) Highest Performance - Read performance (Max.)
- Random read: 25us
- Sequential read cycle: 35ns
- Write Erase performance
- Page program time: 250us(typ.)
- Endurance specification is based on 1bit/528 byte ECC (Error Correcting Code). Release Date: January 7th, 2019 7 Revision B W29N08GW/Z
