W29N08GW
Description
The W29N08GW/Z (8G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power.
Key Features
- Basic Features – Density : 8Gbit (2 chip stacked solution) – Vcc : 1.7V to 1.95V – Bus width : x8/x16 – Operating temperature
- Industrial: -40°C to 85°C
- Single-Level Cell (SLC) technology
- Organization
- 1,056 words (1024 + 32 words) – Block size
- Highest Performance – Read performance (Max.)
- Random read: 25us
- Sequential read cycle: 35ns
- Page program time: 250us(typ.)
- Block erase time: 2ms(typ.) – Endurance 100,000 Erase/Program Cycles(1) – 10-years data retention
